Open Access
表 1
镀膜工艺参数
| 参数 | Ti掺杂DLC |
| 真空度/(10-3 Pa) | 2.5 |
| 电弧电流/A | 100 |
| 负偏压/V | 1 000 |
| C沉积时间/min | 60 |
| Ti沉积时间/min | 10 |
| H2流速/(10-3m3h-1) | 1.2 |
| 基体加热温度/(℃) | 200 |
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