Analysis of factors affecting temperature uniformity of high-temperature electrostatic chucks in CVD equipment

CVD设备高温静电卡盘温度均匀性影响因素分析

Beijing Vacuum Electronic Research Institute, Beijing 100015, China

Received: 30 November 2025

Abstract

The electrostatic chuck is a semiconductor process equipment that uses electrostatic adsorption force to attach a wafer to a surface and controls the surface temperature of the wafer through thermal conduction as the main temperature control method. It plays a key role in current integrated circuit equipment. The uniformity of temperature (temperature difference) directly affects the quality of wafer film formation and is one of the crucial indicators. This study focuses on the factors affecting heat transfer in electrostatic chucks under high-temperature CVD process environment. Firstly, a thermal conduction model between CVD chamber environment and electrostatic chuck is established using ANSYS Workbench; Then, the influence of different electrostatic chuck structures and engineering errors on the surface temperature uniformity of electrostatic chucks under CVD process environment is analyzed; Finally, experiments also verified the simulation results of one type of electrostatic chuck through CVD chamber. Based on the above analysis, the results indicate that for this type of electrostatic chuck, the contact structure between the disc body and the shaft, as well as the distribution of heating wires, have a significant impact on the temperature field distribution. The inclination of the heating wire has almost no effect on the temperature field distribution, The thermal conductivity of the shaft, the thickness of the shaft wall, and the size of the electrostatic chuck have an impact on the local temperature field distribution. The research content of this article has important guiding significance for the improvement of heat transfer theory of electrostatic chucks and the subsequent design optimization of electrostatic chucks.

摘要

静电卡盘(electrostatic chuck)是一种利用静电吸附力将晶圆吸附在表面, 并以热传导为主要控温方式控制晶圆表面温度的半导体工艺设备, 在目前的集成电路装备中起到关键作用。温度均匀性(温差)直接影响晶圆成膜质量, 是至关重要的指标之一。高温CVD工艺环境下针对静电卡盘传热的影响因素进行研究。采用ANSYS Workbench建立了CVD腔室环境与静电卡盘的热传导模型, 分析了在CVD工艺环境下不同静电卡盘结构及工程上的误差对于静电卡盘表面温度均匀性的影响, 并通过CVD腔室对其中一种静电卡盘仿真结果进行实验验证。研究结果表明: 对于该类型静电卡盘, 盘体和轴之间的接触结构、加热丝分布对温度场分布具有显著影响, 而加热丝倾斜则对温度场分布几乎没有影响; 静电卡盘轴材料的导热系数、轴壁厚度、静电卡盘的尺寸对局部温度场分布存在影响。研究内容对于静电卡盘传热理论完善及后续静电卡盘的设计优化具有重要的指导意义。