Open Access
| Issue |
JNWPU
Volume 43, Number 6, December 2025
|
|
|---|---|---|
| Page(s) | 1246 - 1254 | |
| DOI | https://doi.org/10.1051/jnwpu/20254361246 | |
| Published online | 02 February 2026 | |
- OH Jongyeob, JO Sunghun. Radiation-hardened 16T SRAM cell with improved read and write stability for space applications[J]. Applied Sciences, 2024, 14: 119–133 [Google Scholar]
- KANNAN R, VIDHYA K. PDQRRFF: Poisson-distributed quantum random reversible flip-flop generator for BIST[J]. Integration, 2024, 100: 102289 [Google Scholar]
- JUN Cheoljeon. Multi-layer QCA shift registers and wiring structure for LFSR in stream cipher with low energy dissipation in quantum nanotechnology[J]. Electronics, 2023, 12(19): 4093–5002. [Article] [Google Scholar]
- LI Sai, HAN Jianwei, CHEN Rui, et al. Study on the single-event upset sensitivity of 65 nm CMOS sequential logic circuit[J]. IEICE Electronics Express, 2020, 17(10): 1–6 [Google Scholar]
- SUN Yu, ZHAO Yuanfu, YUE Suge, et al. 28 nm flip-flops hardened against single event upset of withe filter structure[J]. Modern Applied Physics, 2022, 13(1): 010608 (in Chinese) [Google Scholar]
- LEONEL Hernández Martínez, SAQIB Khursheed, SUDHAKAR Mannapuram Reddy. LFSR generation for high test coverage and low hardware overhead[J]. IET Computers & Digital Techniques, 2020, 14(1): 27–36 [Google Scholar]
- DODD P E, SHANEYFELT M R, SCHWANK J R, et al. Current and future challenges in radiation effects on CMOS electronics[J]. IEEE Trans on Nuclear Science, 2010, 57(4): 1747–1763. [Article] [Google Scholar]
- YU Zhiguo, LI Qingqing, FENG Xiang, et al. An LFSR-based address using optimized address partition for low power memory BIST[J]. Journal of Measurement Science and Instrumentation, 2020(3): 205–210 [Google Scholar]
- GASPARD N, JAGANNATHANS, DIGGINS Z, et al. Technology scaling comparison of flip-flop heavy-ionsingle-event upset cross sections[J]. IEEE Trans on Nuclear Science, 2013, 60(6): 436–440 [Google Scholar]
- EVANGELOS Paparsenos, YIORGOS Tsiatouhas. Radiation-hardened latch design with triple-node-upset recoverability[J]. AEUE-International Journal of Electronics and Communications, 2024, 187: 121–132 [Google Scholar]
- 苏梦瑶, 陈旭斌, 邱仅朋, 等. 抗单粒子翻转的高可靠移位寄存器设计[J]. 浙江大学学报, 2016, 50(4): 792-798 [Google Scholar]
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.